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Electric field effect on magneic domain wall velocity
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Dr. Weiwe Lin

Instiut d'Electronique Fondamentale, Université Paris-Sud, Orsay, France

Time:14:30, Jan. 6, 2014

Location:A213, Cyrus Tang Building

    Voltage control of magnetic properties is an attractive topic because of both novel fundamental physics and potential application to nano-devices with low power dissipation. Recently, there is emerged interest to study electric field effect on magnetic domain wall motion.

    In this talk, I will introduce recent progress on voltage control of magnetic properties in ferromagnetic/dielectric structures, in particular, the voltage effect on magnetic domain wall motion. Then, I will show the direct observation of gate voltage effect on magnetic domain wall velocity in Ta/CoFeB/MgO/TiO2 structure with perpendicular magnetic anisotropy. A phenomenological description for the gate voltage effect on domain wall velocity has been established by using voltage dependent effective magnetic field, which is applicable in all the observed regimes of magnetic domain wall dynamics.

Weiwei Lin received his Ph.D. degree in condensed matter physics from Nanjing University in 2007. From 2009 to 2010, he was a postdoctoral researcher in Institut Jean Lamour in Nancy-Université (France). He has 10 years expertise in nanomagnetism and spintronics. His research areas include magnetic properties, magnetization dynamics, spin transport and thermoelectric effect in magnetic ultra-thin films and nanostructures, and electrical and magnetic transport properties of graphene.