芦红博士
加州大学圣芭芭拉分校
报告时间：4月11日（周五）下午15:00
报告地址：科学楼902
报告摘要：
Semiconductors are the primary materials widely used in electronic and optoelectronic devices in today's technology. Enhancement in device performance and advancement in technology depend largely on the properties of the semiconductors employed therefore effective ways to engineer the properties are desirable. Rare earth (RE) elements have been used as unconventional dopant sources for III-V semiconductors. Grown by molecular beam epitaxy (MBE), nanostructures of RE-V can be formed spontaneously when RE is introduced during a III-V semiconductor growth forming a RE-V/III-V nanocomposite. We have been utilizing these nanostructures to engineer the properties of III-V semiconductors for variety of applications and erbium (Er) is one of the RE elements that has been studied extensively. In this talk, I will demonstrate that by controlling the MBE growth process we are able to control the formation, size and shape of RE-V nanostructures, most importantly the incorporation of the nanostructures in semiconductors, therefore the properties of the semimetal-semiconductor nanocomposites are engineerable for various applications, including thermoelectrics, THz technology and plasmonics.
报告人简介：
Dr. Hong Lu received her B. S. degree in Chemistry from the University of Science and Technology of China, and Ph.D. in Chemistry from the City University of New York in 2007. Her Ph.D. research was focused on intersubband transitions of wide bandgap II-VI semiconductors grown by MBE. She is currently working at the University of California at Santa Barbara (UCSB) as a project scientist. Her current research areas include using and developing MBE growth techniques for synthesis of novel materials and material structures, characterization and processing for both fundamental understanding and device applications. Her research interests include developing novel materials for high performance thermoelectrics, semimetallic nanostructures for plasmonics, high mobility two dimensional electron gases for electronic spin states control and rare earth-V compounds in III-V semiconductors for ultrafast photoconductive switches and THz based technology. Dr. Lu has served as referee for a number of journals, session chair for conferences, and coauthored in over 70 papers in peer-reviewed journals.